Title :
Nonlinear absorption in silicon at mid infrared wavelengths
Author :
Raghunathan, V. ; Shori, R. ; Stafsudd, O. ; Jalali, B.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA
Abstract :
We report measurements of nonlinear absorption in mid-IR wavelengths. The absence of nonlinear losses beyond the two-photon bandedge combined with high Raman gain, thermal conductivity and damage threshold renders silicon an excellent mid-IR Raman crystal.
Keywords :
Raman lasers; elemental semiconductors; laser beams; nonlinear optics; optical materials; silicon; thermal conductivity; two-photon processes; Raman effect; Raman gain; damage threshold; mid infrared wavelengths; mid-IR Raman crystal; nonlinear absorption; nonlinear losses; silicon; thermal conductivity; two-photon absorption; two-photon bandedge; Electromagnetic wave absorption; Laser excitation; Optical losses; Photonic band gap; Pulse measurements; Pump lasers; Silicon; Space vector pulse width modulation; Stimulated emission; Wavelength measurement;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708195
