DocumentCode
2661994
Title
Nonlinear absorption in silicon at mid infrared wavelengths
Author
Raghunathan, V. ; Shori, R. ; Stafsudd, O. ; Jalali, B.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA
fYear
2006
fDate
13-15 Sept. 2006
Firstpage
149
Lastpage
151
Abstract
We report measurements of nonlinear absorption in mid-IR wavelengths. The absence of nonlinear losses beyond the two-photon bandedge combined with high Raman gain, thermal conductivity and damage threshold renders silicon an excellent mid-IR Raman crystal.
Keywords
Raman lasers; elemental semiconductors; laser beams; nonlinear optics; optical materials; silicon; thermal conductivity; two-photon processes; Raman effect; Raman gain; damage threshold; mid infrared wavelengths; mid-IR Raman crystal; nonlinear absorption; nonlinear losses; silicon; thermal conductivity; two-photon absorption; two-photon bandedge; Electromagnetic wave absorption; Laser excitation; Optical losses; Photonic band gap; Pulse measurements; Pump lasers; Silicon; Space vector pulse width modulation; Stimulated emission; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location
Ottawa, Ont.
Print_ISBN
1-4244-0096-1
Type
conf
DOI
10.1109/GROUP4.2006.1708195
Filename
1708195
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