DocumentCode
2662051
Title
Photoluminescence Mechanism of Si Nanocrystals Embedded in SiO2 Matrix
Author
Xiaoxin Wang ; Buwen Cheng ; Jinzhong Yu ; Qiming Wang
Author_Institution
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing
fYear
2006
fDate
13-15 Sept. 2006
Firstpage
158
Lastpage
160
Abstract
The interface state recombination effect from the quantum confinement effect in PL signals from the SRO material system was studied. The results show that the larger the size of Si NCs, the more beneficial for the interface state recombination process to surpass the quantum confinement process, in support of Qin´s model
Keywords
elemental semiconductors; interface states; nanostructured materials; photoluminescence; silicon; silicon compounds; PL signals; Qin´s model; Si; SiO2; interface state recombination effect; photoluminescence mechanism; quantum confinement effect; silicon dioxide matrix; silicon nanocrystals; silicon rich oxide material system; Annealing; Deconvolution; Integrated optoelectronics; Interface states; Luminescence; Nanocrystals; Photoluminescence; Potential well; Radiative recombination; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location
Ottawa, Ont.
Print_ISBN
1-4244-0096-1
Type
conf
DOI
10.1109/GROUP4.2006.1708198
Filename
1708198
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