DocumentCode
2662065
Title
Integrated Silicon Waveguide-based Structures for Terminal Detection of 1550nm
Author
Doylend, J.K. ; Foster, P.J. ; Bradley, J.D.B. ; Jessop, P.E. ; Knights, A.P.
Author_Institution
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont.
fYear
2006
fDate
13-15 Sept. 2006
Firstpage
161
Lastpage
163
Abstract
We describe the fabrication of defect engineered waveguide detectors, and demonstrate that with optimal thermal treatment, detector dark current may be minimized to be a small fraction of the signal, even at a reverse bias of 5 V. A design for a terminal detector (as opposed to a signal monitor) is proposed which consists of a waveguide ring. Preliminary simulations suggest a significant increase in responsivity compared to straight waveguide detectors
Keywords
elemental semiconductors; heat treatment; integrated optoelectronics; optical fabrication; optical waveguide components; photodetectors; silicon; 1550 nm; 5 V; Si; defect engineered waveguide detectors; detector dark current; integrated silicon waveguide-based structures; optimal thermal treatment; terminal detector; waveguide ring; Absorption; CMOS process; CMOS technology; Monitoring; Optical attenuators; Optical detectors; Optical device fabrication; Optical sensors; Optical waveguides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location
Ottawa, Ont.
Print_ISBN
1-4244-0096-1
Type
conf
DOI
10.1109/GROUP4.2006.1708199
Filename
1708199
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