Title :
A new field-plated GaN HEMT structure with improved power and noise performance
Author :
Xu, Hongtao ; Sanabria, Christopher ; Chini, Alessandro ; Wei, Yun ; Heikman, Sten ; Keller, Stacia ; Mishra, Umesh K. ; York, Robert A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Field-plated structures can dramatically improve power capacity of GaN HEMT devices. In this paper, two different field-plated GaN HEMT structures were demonstrated and compared to each other. The results show that a new GaN HEMT structure improves both power and noise performance without additional processing or costs.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device noise; wide band gap semiconductors; GaN; field-plated HEMT structure; high electron mobility transistor; noise performance; power-density; Aluminum gallium nitride; Circuit noise; Fabrication; Fingers; Frequency; Gallium nitride; HEMTs; Passivation; Protection; Silicon compounds;
Conference_Titel :
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
981-256-196-X
DOI :
10.1109/LECHPD.2004.1549692
