Bipolar issues in advanced power BiCMOS technology

Author

Efland, Taylor ; Devore, Joe ; Hastings, Alan ; Pendharkar, Sameer ; Teggatz, Ross

Author_Institution

Mixed Signal Analog Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA

fYear

2000

fDate

2000

Firstpage

20

Lastpage

27

Abstract

Technology is driven by the evolving CMOS roadmap, and as a consequence, it is increasingly difficult to integrate high performance bipolar devices without unduly increasing process complexity. Designers want and need good NPN devices for key circuits; a table of some of these is outlined. Bipolar device needs and the difficulties of device performance vs. integration are described for typical advanced power BiCMOS technology with respect to design concerns. Other bipolar issues relating to guard-ring, parasitics, and ESD concerns are also briefly discussed

Keywords

BiCMOS integrated circuits; bipolar transistors; electrostatic discharge; integrated circuit design; power integrated circuits; CMOS roadmap; ESD; NPN devices; bipolar device integration; bipolar devices; bipolar issues; device performance; guard-ring; parasitics; power BiCMOS design; power BiCMOS technology; process complexity; Analog circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Electrostatic discharge; Integrated circuit technology; Low voltage; Robustness; Signal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886166

Filename

886166