Title :
Noise characteristics of field-plated GaN HEMTs
Author :
Wu, Y.F. ; Moore, M. ; Wisleder, T. ; Chavarkar, P.M. ; Parikh, P. ; Saxler, A.
Author_Institution :
Cree Santa Barbara Technol. Center, Goleta, CA, USA
Abstract :
Investigation into field-plated GaN HEMTs has revealed that, although addition of the field plate reduces cutoff frequencies, noise figure actually improves. An analysis is presented to explain this phenomenon, which is related to the trade-off between gate-drain capacitance and gate conductance.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device noise; wide band gap semiconductors; GaN; cutoff frequencies; field-plated HEMT; gate conductance; gate-drain capacitance; high electron mobility transistor; noise characteristics; noise figure; Capacitance; Circuits; Cutoff frequency; Fabrication; Gallium nitride; HEMTs; Low-frequency noise; MODFETs; Noise figure; Noise measurement;
Conference_Titel :
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
981-256-196-X
DOI :
10.1109/LECHPD.2004.1549693
