• DocumentCode
    2662120
  • Title

    Low-Power, High-Speed Mach-Zehnder Modulator in Silicon

  • Author

    Specter, S.J. ; Lyszczarz, T.M. ; Geis, M.W. ; Lennon, D.M. ; Yoon, Jinsu ; Grein, Matthew E. ; Schulein, R.T. ; Fuwan Gan ; Kaertner, Franz

  • Author_Institution
    Lincoln Lab., MIT, Lexington, MA
  • fYear
    2006
  • fDate
    13-15 Sept. 2006
  • Firstpage
    164
  • Lastpage
    166
  • Abstract
    A high speed diode-based optical modulator has been fabricated in silicon. This device achieves an extremely low VpiL of 0.02 V-cm from 10-100 MHz. Modulation depths of 30% have been achieved at an input power of 100 mW at 5 GHz
  • Keywords
    frequency response; high-speed optical techniques; optical modulation; optical waveguide components; p-n junctions; semiconductor diodes; silicon; silicon-on-insulator; 10 to 100 MHz; 100 mW; 5 GHz; SOI waveguides; Si-SiO2; diode-based optical modulator; frequency response; high-speed Mach-Zehnder modulator; modulation depth; silicon p-n diodes; CMOS technology; Diodes; Frequency; High speed optical techniques; Optical devices; Optical interferometry; Optical modulation; Optical waveguides; Silicon; Slabs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2006. 3rd IEEE International Conference on
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    1-4244-0096-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2006.1708200
  • Filename
    1708200
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2662120