Title :
Waveguide-Integrated Ge p-i-n Photodetectors on SOI Platform
Author :
Liu, J.F. ; Pan, D. ; Jongthammanurak, S. ; Ahn, D. ; Hong, C.Y. ; Beals, M. ; Kimerling, L.C. ; Michel, J. ; Pomerene, A.T. ; Hill, C. ; Jaso, M. ; Tu, K.Y. ; Chen, Y.K. ; Patel, S. ; Rasras, M. ; White, A. ; Gill, D.M.
Author_Institution :
Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA
Abstract :
We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at lambda=1520 nm, and a 3 dB bandwidth of >4.5 GHz measured at lambda=1550 nm
Keywords :
CMOS integrated circuits; elemental semiconductors; germanium; integrated optoelectronics; optical waveguides; p-i-n photodiodes; photodetectors; silicon; silicon-on-insulator; 1520 nm; 1550 nm; CMOS technology; Ge; SOI; Si; Si-SiO2; germanium p-i-n photodetectors; monolithic integration; silicon waveguide; waveguide-integrated photodetectors; Bandwidth; CMOS technology; Detectors; Materials science and technology; Optical waveguides; PIN photodiodes; Photodetectors; Photonic integrated circuits; Semiconductor waveguides; Silicon;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708203
