Title :
III-V HBTs for microwave applications: technology status and modeling challenges
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
This paper provides an overview of GaAs HBT applications to microwave power amplifiers, and discusses associated technology challenges, and modeling issues. On-going research efforts with GaInP-GaAs and GaInNAs-GaAs heterostructures are described. The development of comprehensive large signal models for amplifier design is reviewed; nonlinearity mechanisms, saturation effects, thermal effects, ledge effects, and heterojunction effects are discussed
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power amplifiers; semiconductor device models; semiconductor heterojunctions; GaAs; GaAs HBT applications; GaInNAs-GaAs; GaInNAs-GaAs heterostructures; GaInP-GaAs; GaInP-GaAs heterostructures; III-V HBTs; amplifier design; heterojunction effects; large signal models; ledge effects; microwave applications; microwave power amplifiers; modeling; nonlinearity mechanisms; saturation effects; technology challenges; technology status; thermal effects; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Linearity; Microwave amplifiers; Microwave devices; Microwave technology; Power amplifiers; Telephone sets; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886172
