• DocumentCode
    2662174
  • Title

    Temperature-Dependent Analysis of Ge-on-SOI Photodetectors and Receivers

  • Author

    Koester, S.J. ; Schares, L. ; Schow, C.L. ; Dehlinger, G. ; John, R.A.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY
  • fYear
    2006
  • fDate
    13-15 Sept. 2006
  • Firstpage
    179
  • Lastpage
    181
  • Abstract
    The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85degC despite a 10x increase in dark current compared to room temperature
  • Keywords
    elemental semiconductors; germanium; integrated optoelectronics; optical receivers; photodetectors; photodiodes; silicon-on-insulator; thermo-optical effects; 10 Gbit/s; 85 C; Ge-Si-SiO2; Ge-on-SOI photodetectors; dark current; error-free receiver operation; photodiodes; receiver performance; temperature-dependent analysis; Bandwidth; Dark current; Detectors; Error-free operation; Optical receivers; PIN photodiodes; Photodetectors; Photonic band gap; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2006. 3rd IEEE International Conference on
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    1-4244-0096-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2006.1708205
  • Filename
    1708205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2662174