Leaky surface acoustic waves in single-crystal AlN substrate

Author

Bu, Gang ; Ciplys, D. ; Shur, Michael S. ; Schowalter, Leo J. ; Schujman, Sandra B. ; Gaska, Remis

Author_Institution

Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2004

fDate

4-6 Aug. 2004

Firstpage

213

Lastpage

222

Abstract

We report on the velocity V and the electromechanical coupling coefficient K² of the first and the second leaky surface acoustic waves in various propagation directions in the a-plane AlN single-crystal. For c-propagation direction, the second leaky wave exhibited the velocity of 11016 m/s and K² of 0.45%. For this direction, the temperature coefficient of frequency was found to be -30 ppm/°C. A near match of the velocities of the plane and leaky waves in the a-plane AlN allowed us to establish analytical relationships between the piezoelectric and elastic constants. A full set of elastic and piezoelectric constants of AlN has been evaluated by fitting the measured and calculated dependencies of velocities and electromechanical coupling coefficients on the propagation direction for both Rayleigh and leaky waves.

Keywords

III-V semiconductors; aluminium compounds; electromechanical effects; piezoelectricity; surface acoustic waves; wide band gap semiconductors; 11016 m/s; AlN; Rayleigh waves; c-propagation direction; elastic constants; electromechanical coupling coefficient; leaky surface acoustic waves; piezoelectric constants; plane waves; propagation directions; single-crystal AlN substrate; temperature coefficient; Acoustic propagation; Acoustic waves; Acoustical engineering; Dielectric substrates; Electric potential; Piezoelectric materials; Stability; Surface acoustic waves; Surface fitting; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

981-256-196-X

Type

conf

DOI

10.1109/LECHPD.2004.1549697

Filename

1549697