GaAs based HBT large signal modeling using VBIC for linear power amplifier applications

Author

Tutt, Marcel

Author_Institution

Lab. for DigitalDNA, Motorola Inc., Tempe, AZ, USA

fYear

2000

fDate

2000

Firstpage

58

Lastpage

61

Abstract

The relevant performance parameters that a large signal device model must predict for linear power amplifier design have been identified. The VBIC model (McAndrew et al., IEEE JSSC vol. 31, no. 10, pp. 1476-83, 1996) was applied to gallium arsenide based heterojunction bipolar transistors and shown to accurately predict all of these performance parameters

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; integrated circuit design; linear network synthesis; power amplifiers; semiconductor device models; GaAs; GaAs based HBT large signal modeling; VBIC; VBIC model; gallium arsenide based heterojunction bipolar transistors; large signal device model; linear power amplifier applications; linear power amplifier design; performance parameters; Circuits; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Power amplifiers; Power generation; Power system modeling; Predictive models; Signal design; Signal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886173

Filename

886173