Title :
Heterogeneous Integration of III-V Photodetectors and Laser Diodes on Silicon-on-Insulator Waveguide Circuits
Author :
Roelkens, G. ; Brouckaert, J. ; Verstuyft, S. ; Schrauwen, J. ; Van Thourhout, D. ; Baets, R.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ.
Abstract :
InP/InGaAsP photodetectors and lasers were integrated on top of ultra-compact silicon-on-insulator waveguide circuits using benzocyclobutene adhesive bonding. Light is coupled between III-V device and SOI waveguide using an inverted taper
Keywords :
III-V semiconductors; adhesive bonding; arsenic compounds; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated circuit bonding; integrated optics; integrated optoelectronics; optical couplers; optical waveguides; photodetectors; semiconductor lasers; silicon-on-insulator; III-V photodetectors; InP-InGaAsP; Si-SiO2; benzocyclobutene adhesive bonding; heterogeneous integration; inverted taper; laser diodes; light coupling scheme; silicon-on-insulator waveguide circuits; Coupling circuits; Diode lasers; III-V semiconductor materials; Indium phosphide; Optical coupling; Optical waveguides; Photodetectors; Polymers; Silicon on insulator technology; Wafer bonding;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708208
