DocumentCode
2662267
Title
Trench termination technique with vertical JTE for 6 kV devices
Author
Dragomirescu, Daniela ; Charitat, Georges
Author_Institution
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
fYear
2000
fDate
2000
Firstpage
86
Lastpage
89
Abstract
A new termination technique using deep trenches and vertical JTE (junction termination extension) is reported. The device breakdown voltage is increased to almost the ideal value and the silicon area consumption is much lower than other solutions
Keywords
elemental semiconductors; high-voltage techniques; isolation technology; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; silicon; 6 kV; deep trenches; device breakdown voltage; power semiconductor devices; silicon area consumption; termination technique; trench termination technique; vertical JTE; vertical junction termination extension; Availability; Avalanche breakdown; Breakdown voltage; Etching; Low voltage; Passivation; Protection; Silicon; Space charge; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-6384-1
Type
conf
DOI
10.1109/BIPOL.2000.886179
Filename
886179
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