• DocumentCode
    2662324
  • Title

    High Performance Quantum-Dot Lasers on Silicon - Challenges and Future Prospects

  • Author

    Bhattacharya, P. ; Mi, Z. ; Yang, J.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
  • fYear
    2006
  • fDate
    13-15 Sept. 2006
  • Firstpage
    206
  • Lastpage
    208
  • Abstract
    We report the growth and characteristics of high performance self-organized InGaAs/GaAs quantum dot lasers on silicon. The devices exhibit low threshold current (Jth~900 A/cm2), high output power (~150 mW), and large characteristic temperature (T0=244 K)
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; laser beams; quantum dot lasers; semiconductor quantum dots; silicon; 244 K; 293 to 298 K; InGaAs-GaAs; characteristic temperature; high performance quantum dot laser characteristics; laser output power; self-organized InGaAs/GaAs quantum dot laser; silicon; threshold current; Buffer layers; Capacitive sensors; Filters; Gallium arsenide; Indium gallium arsenide; Power generation; Quantum dot lasers; Quantum well lasers; Silicon; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2006. 3rd IEEE International Conference on
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    1-4244-0096-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2006.1708214
  • Filename
    1708214
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2662324