• DocumentCode
    2662387
  • Title

    Enhancement of Fowler-Nordheim Tunneling Based Light Emission from metal-SiOx-Si MOSLED

  • Author

    Gong-Ru Lin ; Chun-Jung Lin

  • Author_Institution
    Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei
  • fYear
    2006
  • fDate
    13-15 Sept. 2006
  • Firstpage
    219
  • Lastpage
    221
  • Abstract
    PECVD grown nanocrystallite Si structure at SiOx/Si interface has been demonstrated to show its capability in enhancing the surface roughness and the Fowler-Nordheim tunneling based carrier injection for improved light emission from a metal-SiOx-Si MOSLED
  • Keywords
    light emitting diodes; metal-insulator boundaries; nanostructured materials; plasma CVD; silicon compounds; surface roughness; Fowler-Nordheim tunneling; PECVD; SiOx-Si; SiOx-Si interface; carrier injection; light emission; metal-SiOx-Si MOSLED; nanocrystallite Si structure; surface roughness; Conductivity; Indium tin oxide; Lattices; Nanocrystals; Nanostructures; Plasma temperature; Rough surfaces; Substrates; Surface roughness; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2006. 3rd IEEE International Conference on
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    1-4244-0096-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2006.1708219
  • Filename
    1708219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2662387