• DocumentCode
    2662437
  • Title

    Reduction of neutral base recombination in narrow band-gap SiGeC base heterojunction bipolar transistors

  • Author

    Takagi, T. ; Yuki, K. ; Toyoda, K. ; Kanzawa, Y. ; Katayama, K. ; Nozawa, K. ; Saitoh, T. ; Kubo, M.

  • Author_Institution
    Adv. Technol. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    114
  • Lastpage
    117
  • Abstract
    Narrow band-gap SiGeC base HBTs were fabricated by Si compatible processing. By introducing 0.3% carbon into the SiGe layers, lattice strain was decreased and neutral base recombination localized at the collector-base heterojunction was significantly reduced
  • Keywords
    Ge-Si alloys; carbon compounds; electron-hole recombination; heterojunction bipolar transistors; narrow band gap semiconductors; semiconductor device measurement; Si compatible processing; SiGe layers; SiGeC; carbon content; collector-base heterojunction; lattice strain; localized neutral base recombination; narrow band-gap SiGeC base HBTs; narrow band-gap SiGeC base heterojunction bipolar transistors; neutral base recombination reduction; Capacitive sensors; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Photonic band gap; Silicon alloys; Silicon germanium; Substrates; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-6384-1
  • Type

    conf

  • DOI
    10.1109/BIPOL.2000.886186
  • Filename
    886186
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2662437