Reduction of UHF power transistor distortion with a non-uniform collector doping profile

Author

van Noort, W.D. ; Jos, H.F.F. ; Vreede, L.C.N. ; Nanver, Lis K. ; Slotboom, J.W.

Author_Institution

Lab. of Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands

fYear

2000

fDate

2000

Firstpage

126

Lastpage

129

Abstract

An arsenic spike is epitaxially grown in the lightly-doped collector of a UHF power transistor to reduce collector-base capacitance C_cb bias dependence and improve the trade-off linearity and breakdown/ruggedness. This is demonstrated experimentally and by mixed mode MDS/MAIDS simulations

Keywords

UHF bipolar transistors; chemical vapour deposition; doping profiles; intermodulation distortion; power bipolar transistors; semiconductor device measurement; semiconductor device models; vapour phase epitaxial growth; CVD epitaxy; Si:As; UHF power transistor; UHF power transistor distortion; arsenic spike epitaxial growth; breakdown; collector-base capacitance bias dependence; intermodulation distortion; lightly-doped collector; mixed mode MDS/MAIDS simulations; nonuniform collector doping profile; ruggedness; trade-off linearity; Bipolar transistors; Circuit simulation; Doping profiles; Epitaxial growth; Intermodulation distortion; Laboratories; Linearity; Nonlinear distortion; Power transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886188

Filename

886188