Self-aligned contact submicron E/D MODFET IC process: device characteristics and simple circuit applications

Author

Rohdin, Hans ; Nagy, Avelina ; Fischer-Colbrie, Alice ; Kocot, Chris ; Jaeger, Rolf

Author_Institution

Hewlett-Packard Lab., Palo Alto, CA, USA

fYear

1990

fDate

1-3 May 1990

Firstpage

2538

Abstract

A high-speed, low-power GaAs enhancement/depletion (E/D) IC process for MSI applications (10³ devices) is described. The process relies on high-quality molecular-beam-epitaxy (MBE)-grown modulation-doped wafers, and an etch-stop reactive ion etch (RIE) process that preserves the inherent uniformity and control achievable with this growth technique

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; high electron mobility transistors; integrated circuit technology; molecular beam epitaxial growth; semiconductor growth; sputter etching; GaAs; MBE; MSI; RIE; circuit applications; device characteristics; enhancement depletion process; etch-stop reactive ion etch; inherent uniformity; modulation-doped wafers; molecular-beam-epitaxy; self-aligned contact; semiconductors; submicron E/D MODFET IC process; Epitaxial layers; Gallium arsenide; HEMTs; High speed integrated circuits; Integrated circuit noise; Laboratories; Lithography; MODFET circuits; MODFET integrated circuits; Molecular beam epitaxial growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., IEEE International Symposium on

Conference_Location

New Orleans, LA

Type

conf

DOI

10.1109/ISCAS.1990.112527

Filename

112527