DocumentCode
2662494
Title
InP opto-electronic integrated circuits
Author
Daniels, R.R. ; Fuji, H.S. ; Griem, H.T. ; Harrang, J.P. ; Williams, T. ; Ray, S.
Author_Institution
Boeing Aerosp. & Electron., Seattle, WA, USA
fYear
1990
fDate
1-3 May 1990
Firstpage
2543
Abstract
The requirements of InP opto-electronic ICs (OEIC) are discussed, and the progress being made in meeting these requirements is reviewed. Advantages and problems associated with the integration of OEIC elemental devices (e.g. laser diodes, photodetectors, and transistors) are discussed. The progress on two circuits, laser-transmitters and photodetector-receivers, is reviewed to demonstrate the integration of these elemental devices
Keywords
III-V semiconductors; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; receivers; semiconductor junction lasers; transmitters; InP; OEIC; integration of OEIC elemental devices; laser diodes; laser-transmitters; opto-electronic ICs; opto-electronic integrated circuits; photodetector-receivers; photodetectors; semiconductors; transistors; Bandwidth; Circuits; Diode lasers; Indium phosphide; Optical devices; Optical materials; Optical transmitters; Optoelectronic devices; Photodetectors; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location
New Orleans, LA
Type
conf
DOI
10.1109/ISCAS.1990.112528
Filename
112528
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