Extraction of the base-collector capacitance splitting along the base resistance using HF measurements [bipolar transistors]

Author

Berger, D. ; Gambetta, N. ; Céli, D. ; Dufaza, C.

Author_Institution

ISIM, Univ. des Sci. et Tech. du Languedoc, Montpellier, France

fYear

2000

fDate

2000

Firstpage

180

Lastpage

183

Abstract

This paper presents an efficient method to evaluate with accuracy the partitioning of the base-collector depletion capacitance through the base resistance by the way of the SPICE Gummel-Poon (SGP) model parameter X_CJC. This parameter is directly extracted, without any optimization, from the real part of the high-frequency small-signal admittance Y₁₂ in common emitter configuration

Keywords

SPICE; bipolar transistors; capacitance; electric admittance; electric resistance; semiconductor device measurement; semiconductor device models; HF measurements; SPICE Gummel-Poon model parameter; base resistance; base-collector capacitance splitting; base-collector depletion capacitance partitioning; bipolar transistors; common emitter configuration; direct parameter extraction; high-frequency small-signal admittance; optimization; Admittance measurement; Capacitance measurement; Electrical resistance measurement; Equations; Equivalent circuits; Frequency estimation; Hafnium; Parameter extraction; Performance evaluation; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886199

Filename

886199