Transistor noise in SiGe HBT RF technology

Author

Niu, Guofu ; Cressler, John D. ; Jin, Zhenrong ; Zhang, Shining ; Juraver, Jean B. ; Borgarino, Mattia ; Plana, Robert ; Llopis, Olivier ; Webster, C. ; Joseph, Alvin J.

Author_Institution

Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA

fYear

2000

fDate

2000

Firstpage

207

Lastpage

210

Abstract

This work presents experimental and modeling results of device noise in SiGe HBT RF technology. Two major concerns for RF applications are examined: (1) the RF noise that determines the low-noise amplifier (LNA) performance; and (2) the residual phase noise that results from the up-conversion of low-frequency noise and determines the phase noise of the local oscillator (LO) and mixer circuits

Keywords

Ge-Si alloys; MMIC amplifiers; MMIC mixers; MMIC oscillators; UHF amplifiers; UHF bipolar transistors; UHF mixers; UHF oscillators; bipolar MMIC; heterojunction bipolar transistors; microwave bipolar transistors; phase noise; semiconductor device measurement; semiconductor device models; semiconductor device noise; semiconductor materials; LNA performance; RF applications; RF noise; SiGe; SiGe HBT RF technology; device noise; local oscillator circuit; low-frequency noise up-conversion; low-noise amplifier performance; mixer circuit; modeling; phase noise; residual phase noise; transistor noise; Admittance; Circuit noise; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microelectronics; Noise figure; Phase noise; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886206

Filename

886206