Title :
ESD protection for BiCMOS circuits
Author :
Joshi, Sopan ; Juliano, Patrick ; Rosenbaum, Elyse ; Kaatz, Gary ; Kang, Sung-Mo
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
We introduce two new ESD protection elements suitable for use in BiCMOS process technology-a grounded gate NMOS built inside a junction-isolated p-well which acts as a lateral NPN, and a modified Zener-triggered vertical NPN circuit
Keywords :
BiCMOS integrated circuits; MOSFET; Zener diodes; bipolar transistors; electrostatic discharge; integrated circuit measurement; integrated circuit reliability; isolation technology; protection; BJT; BiCMOS circuits; BiCMOS process technology; ESD protection; ESD protection elements; grounded gate NMOSFET; junction-isolated p-well; lateral NPN; modified Zener-triggered vertical NPN circuit; BiCMOS integrated circuits; Breakdown voltage; Electric breakdown; Electrostatic discharge; Isolation technology; MOS devices; Parasitic capacitance; Protection; Radio frequency; Resistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886209
