• DocumentCode
    2663508
  • Title

    Tailored Stress in InP/GaInAs Layers for InP/Air-Gap DBR-Filters with Photonic Crystals

  • Author

    Kusserow, Thomas ; Dharmarasu, N. ; Hillmer, Hartmut ; Nakamura, T. ; Hayakawa, Takeshi ; Vengatesan, B.

  • Author_Institution
    Inst. of Nanostructure Technol. & Analytics, Kassel Univ.
  • fYear
    2006
  • fDate
    21-24 Aug. 2006
  • Firstpage
    88
  • Lastpage
    89
  • Abstract
    A detailed investigation on the control of residual stresses, especially gradient stress, in InP/air-gap structures is presented. Free standing cantilevers with stress compensation by Ga0.03In0.97P layers of various thicknesses and by a variation of V/III flux ratio in growth direction were fabricated, leading to controlled stress properties. White light interferometry was used for evaluation of the gradient stress values
  • Keywords
    III-V semiconductors; compensation; distributed Bragg reflectors; gallium arsenide; gallium compounds; indium compounds; internal stresses; light interferometry; micro-optomechanical devices; optical fabrication; optical films; optical filters; optical testing; photonic crystals; semiconductor epitaxial layers; Ga0.03In0.97P; InP-GaInAs; InP/air-gap DBR-filters; epitaxial layers; flux ratio; free standing cantilevers; gradient stress; optical MEMS; photonic crystals; residual stresses; stress compensation; white light interferometry; Air gaps; Epitaxial layers; Indium phosphide; Lattices; Optical filters; Optical interferometry; Optical sensors; Photonic crystals; Residual stresses; Stress control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical MEMS and Their Applications Conference, 2006. IEEE/LEOS International Conference on
  • Conference_Location
    Big Sky, MT
  • Print_ISBN
    0-7803-9562-X
  • Type

    conf

  • DOI
    10.1109/OMEMS.2006.1708278
  • Filename
    1708278
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2663508