Title :
Modeling Yield of Self-Healing Carbon Nanotubes/Silicon-Nanowire FET-based Nanoarray
Author :
Seol, J. ; Park, N.J. ; George, K.M. ; Park, N.
Author_Institution :
Dept. of Comput. Sci., Oklahoma State Univ., Stillwater, OK, USA
Abstract :
This paper presents a study on the yield of a carbon-nanotube/nanowire-based nanoarray with a focus on a novel property, namely, the self-healing capability, and its impact on the yield improvement. Chemical and fabrication process of nanotube/nanowires for the self-healing capability has been exercised along with the utilization of redundancy. However, no work has adequately addressed the yield issues with synergistic effect of the defect/failure-tolerance by redundancy and self-healing taken into proper account. Also, this work effectively and efficiently addresses the architectural impact on the yield along with the yield improvement processes. Based on the proposed yield model, a set of parametric simulation results is presented to demonstrate the synergistic impact of the conventional redundancy-based defect/failure-tolerance and the self-healing capability on the yield in the context of the unique architecture of the carbon-nanotube/nanowire-based nanoarray.
Keywords :
carbon nanotube field effect transistors; nanofabrication; nanowires; semiconductor device models; C; chemical process; fabrication process; redundancy-based defect-failure-tolerance; self-healing capability; self-healing carbon nanotube-silicon-nanowire FET-based nanoarray modeling yield; Carbon nanotubes; Decoding; Nanoscale devices; Nanowires; Programmable logic arrays; Redundancy; Wires; Carbon Nanotubes; Nanoarray; Self-Healing; Silicon-Nanowires; Yield;
Conference_Titel :
Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2011 IEEE International Symposium on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4577-1713-0
DOI :
10.1109/DFT.2011.48