Title :
Turn-on Condition and Characteristics of High-power Semiconductor Switch RSD
Author :
Zhou, Y.M. ; Yu, Y.H. ; Chen, H.G. ; Liang, L.
Author_Institution :
Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Hubei
Abstract :
RSD (reversely switched dynistor), a high-power semiconductor switch, is similar in design to thyristor with pnpn-regions. Instead of a conventional gate structure, RSD´s anode consists of alternating n+ and p+ sections. In this paper, the RSD turn-on condition is systematically investigated. Analyses and simulations reveal that the trigger charge must be sufficient to assure RSD normal turn-on. To explore the potential application of RSD, several turn-on characteristics are experimentally evaluated. Results indicate that RSD has advantages in fast voltage-falling, great capability of handling high current and high di/dt
Keywords :
power semiconductor switches; trigger circuits; RSD turn-on; power semiconductor switch; reversely switched dynistor; trigger charge; Analytical models; Anodes; Biological materials; Cleaning; Electrons; Gas industry; Plasma devices; Power semiconductor switches; Thyristors; Voltage; RSD; critical charge value; di/dt; high current;
Conference_Titel :
Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0448-7
DOI :
10.1109/IPEMC.2006.4778166
