Influence of Proton Irradiation dose on the Performance of Local Lifetime Controlled Power Diode with Proximity Gettering of Platinum

Based on proximity gettering of platinum by vacancy defects which are induced by proton irradiation, local platinum doping is obtained. It is used as a local lifetime control technology in high-power diodes. The theoretical dependence of electrical active Pt concentration Cpts on irradiation induced defects concentration Cv is also studied. The diodes´ reverse performance parameters are measured. They are functions of irradiation dose. For low proton irradiation dose, the gettered quantities of platinum by irradiation induced defects are enhanced when the irradiation dose increases. This can improve the performances of the device. But when the proton irradiation dose is high enough, the peak concentration of gettered platinum tends saturation. Further more, for deep junction device, the side effect brought by high dose irradiation will decrease the platinum gettering efficiency and the performances of the device degenerated under higher irradiation dose. On the base of theoretical study, we improved the device structure and manufacture process, a higher peak concentration is obtained. The recovery speed has been improved further