DocumentCode
2664396
Title
Deep-trench vertical si photodiode towards active-device integrated OMEMS
Author
Hirose, K. ; Mita, Y. ; Kubota, Minoru ; Shibata, Takuma
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Univ.
fYear
2006
fDate
21-24 Aug. 2006
Firstpage
191
Lastpage
192
Abstract
This paper proposes to integrate "active electro-optical devices" on the deep-etched vertical walls. Vertical photodiodes were fabricated on the 40 mum-deep trench sidewalls and showed 25 to 100% of efficiency improvement
Keywords
electro-optical devices; elemental semiconductors; etching; integrated optoelectronics; micro-optomechanical devices; optical fabrication; photodiodes; silicon; 40 micron; Si; active electro-optical devices; active-device integrated optical MEMS; deep-trench vertical Si photodiode; photodiode fabrication; Aluminum; Detectors; Diodes; Etching; Optical device fabrication; Optical devices; Optical fibers; Particle beam optics; Photodiodes; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical MEMS and Their Applications Conference, 2006. IEEE/LEOS International Conference on
Conference_Location
Big Sky, MT
Print_ISBN
0-7803-9562-X
Type
conf
DOI
10.1109/OMEMS.2006.1708330
Filename
1708330
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