DocumentCode :
2664396
Title :
Deep-trench vertical si photodiode towards active-device integrated OMEMS
Author :
Hirose, K. ; Mita, Y. ; Kubota, Minoru ; Shibata, Takuma
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Univ.
fYear :
2006
fDate :
21-24 Aug. 2006
Firstpage :
191
Lastpage :
192
Abstract :
This paper proposes to integrate "active electro-optical devices" on the deep-etched vertical walls. Vertical photodiodes were fabricated on the 40 mum-deep trench sidewalls and showed 25 to 100% of efficiency improvement
Keywords :
electro-optical devices; elemental semiconductors; etching; integrated optoelectronics; micro-optomechanical devices; optical fabrication; photodiodes; silicon; 40 micron; Si; active electro-optical devices; active-device integrated optical MEMS; deep-trench vertical Si photodiode; photodiode fabrication; Aluminum; Detectors; Diodes; Etching; Optical device fabrication; Optical devices; Optical fibers; Particle beam optics; Photodiodes; Resists;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical MEMS and Their Applications Conference, 2006. IEEE/LEOS International Conference on
Conference_Location :
Big Sky, MT
Print_ISBN :
0-7803-9562-X
Type :
conf
DOI :
10.1109/OMEMS.2006.1708330
Filename :
1708330
Link To Document :
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