A comparison of charge transport in electron-beam and graphite-strip ZMR

Author

Stein, H.J. ; Thompson, L.R. ; Tsao, S.S.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

fYear

1989

fDate

3-5 Oct 1989

Firstpage

121

Lastpage

122

Abstract

Summary form only given. Transport characteristics for SOI produced by zone melt recrystallization (ZMR) methods have been measured and compared to those for separation by implantation of oxygen (SIMOX) and bulk Si. Many of the characteristics are similar to those reported for SIMOX material. Evidence of a deep acceptor level was found in graphite-stripe ZMR, and the low-temperature transport characteristics of e-beam ZMR were found to be degraded by mosaic spread. Thermal donor formation in ZMR SOI has also been examined and is discussed

Keywords

electronic conduction in crystalline semiconductor thin films; elemental semiconductors; recrystallisation; semiconductor technology; semiconductor-insulator boundaries; silicon; SIMOX; ZMR SOI; bulk Si; charge transport; deep acceptor level; e-beam ZMR; electron beam ZMR; graphite-strip ZMR; low-temperature transport characteristics; mosaic spread; semiconductors; separation by implantation of oxygen; thermal donor formation; zone melt recrystallization; Conductivity; Electric resistance; Electric variables measurement; Electron mobility; Grain boundaries; Hall effect; Laboratories; Sulfur hexafluoride; Temperature dependence; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1989., 1989 IEEE

Conference_Location

Stateline, NV

Type

conf

DOI

10.1109/SOI.1989.69796

Filename

69796