Title :
Higher order diffusion model for a bipolar transistor
Author :
Lehtinen, Kari ; Sipila, Markku ; Porra, Veikko
Author_Institution :
Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo, Finland
Abstract :
A higher order diffusion model for a bipolar transistor is described. The model is based on Pade approximations of the quasi-static expansions of the base and collector currents, and it gives improved accuracy for the simulation of fast transients as well as for the simulation of periodic operation at high frequencies. The effect of higher order circuit elements on accuracy is demonstrated by calculating a transient response to a step excitation and by determining the scattering parameters for a linearized model. The higher order elements are replaced by an equivalent circuit including only conventional elements and the transient behavior of the model is compared to higher order model simulations
Keywords :
S-parameters; bipolar transistors; equivalent circuits; semiconductor device models; transient response; Pade approximations; base current; bipolar transistor; collector currents; equivalent circuit; fast transients; high frequencies; higher order circuit elements; higher order diffusion model; linearized model; periodic operation; quasi-static expansions; scattering parameters; simulation; step excitation; transient response; Bipolar transistors; Circuit simulation; Diodes; Electronic circuits; Equations; Frequency; Laboratories; Microwave transistors; Mobile handsets; Transient response;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.112699
