Title :
Application of Run by Run controller to the chemical-mechanical planarization process. I
Author :
Hu, Albert ; Zhang, Xiuhua ; Sachs, Emanuel ; Renteln, Peter
Author_Institution :
San Jose State Univ., CA, USA
Abstract :
The Run by Run (RbR) controller, combining the advantages both statistical process control (SPC) and automatic process control (APC) has been applied successfully to a technically mature epitaxy processes and is now being applied on the chemical-mechanical planarization (CMP process). Three quality metrics are defined and used as measurements of process improvement. The application procedure is divided into five stages, of which the implementation stages one and two have been performed. The data show that a system can be described by an equilibrium state, a transition period responsive to shifts in the input, but exhibiting substantial hysteresis. A transition period between different equilibrium states is clearly observable. The memory that the pad has due to previous recipe is also clearly demonstrated
Keywords :
VLSI; computer integrated manufacturing; feedback; integrated circuit interconnections; integrated circuit manufacture; polishing; process control; statistical process control; Run by Run controller; VLSI; automatic process control; chemical-mechanical planarization process; equilibrium state; gradual mode; hysteresis; memory effect; multilevel metal interconnects; process improvement; quality metrics; rapid mode; statistical process control; transition period; Automatic control; Chemical processes; Chemical technology; Epitaxial growth; Flexible manufacturing systems; Manufacturing processes; Monitoring; Planarization; Process control; Semiconductor device modeling;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1993, Fifteenth IEEE/CHMT International
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-1424-7
DOI :
10.1109/IEMT.1993.398197