Title :
Growth Mechanism Of Planar-type GaAs Quantum Wire Crystals
Author :
Katsuyama, T. ; Hiruma, K. ; Haraguchi, K. ; Hosomi, K. ; Shlrai, M. ; Shigeta, J.
Author_Institution :
Central Research Laboratoy Hitachi Ltd., Kokubunji, Tokyo 185, JAPAN
Keywords :
Electrons; Epitaxial growth; Epitaxial layers; Gallium arsenide; Impurities; Optical polarization; Solids; Substrates; Temperature; Wire;
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO/Pacific Rim '97., Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-3889-8
DOI :
10.1109/CLEOPR.1997.610459
