• DocumentCode
    2666851
  • Title

    1.6 watt 1.9 GHz power amplifier MMIC in silicon

  • Author

    Trost, H.P. ; Simbürger, W. ; Wohlmuth, H.D. ; Knapp, H. ; Weger, P. ; Scholtz, A.L.

  • Author_Institution
    Corp. Res. & Dev. Microelectron., Siemens AG, Munich, Germany
  • fYear
    1997
  • fDate
    35474
  • Firstpage
    42461
  • Lastpage
    42465
  • Abstract
    A monolithic integrated 1.6 W (32 dBm) power amplifier in silicon for 1.9 GHz wireless and mobile communications, is presented. The chip is implemented using 25 GHz ft, 0.8 μm, three layer interconnect silicon bipolar production technology (SIEMENS B6HF). The MMIC is designed for battery operation of 3 V to 6 V at 1.9 GHz and delivers an output power in the range of 0.5 W (27 dBm) to 1.6 W (32 dBm). At 3.0 V power supply, the power added efficiency reaches 35%
  • Keywords
    silicon; 0.5 to 1.6 W; 0.8 micron; 1.9 GHz; 25 GHz; 3 to 6 V; 35 percent; SIEMENS B6HF; Si; mobile communications; output power; power added efficiency; power amplifier MMIC; three layer interconnect; wireless communications;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    RF& Microwave Circuits for Commercial Wireless Applications (Digest No. 1997/026), IEE Colloquium
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19970165
  • Filename
    597786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2666851