Title :
1.6 watt 1.9 GHz power amplifier MMIC in silicon
Author :
Trost, H.P. ; Simbürger, W. ; Wohlmuth, H.D. ; Knapp, H. ; Weger, P. ; Scholtz, A.L.
Author_Institution :
Corp. Res. & Dev. Microelectron., Siemens AG, Munich, Germany
Abstract :
A monolithic integrated 1.6 W (32 dBm) power amplifier in silicon for 1.9 GHz wireless and mobile communications, is presented. The chip is implemented using 25 GHz ft, 0.8 μm, three layer interconnect silicon bipolar production technology (SIEMENS B6HF). The MMIC is designed for battery operation of 3 V to 6 V at 1.9 GHz and delivers an output power in the range of 0.5 W (27 dBm) to 1.6 W (32 dBm). At 3.0 V power supply, the power added efficiency reaches 35%
Keywords :
silicon; 0.5 to 1.6 W; 0.8 micron; 1.9 GHz; 25 GHz; 3 to 6 V; 35 percent; SIEMENS B6HF; Si; mobile communications; output power; power added efficiency; power amplifier MMIC; three layer interconnect; wireless communications;
Conference_Titel :
RF& Microwave Circuits for Commercial Wireless Applications (Digest No. 1997/026), IEE Colloquium
Conference_Location :
London
DOI :
10.1049/ic:19970165
