DocumentCode :
2667000
Title :
1.65 Gb/s 60 mW 4:1 multiplexer and 1.8 Gb/s 80 mW 1:4 demultiplexer ICs using 2 V 3-level series-gating ECL circuits
Author :
Kuroda, Tadahiro ; Fujita, Takashi ; Itabashi, Yosuke ; Kabumoto, S. ; Noda, Masaki ; Kanuma, A.
Author_Institution :
Toshiba Corp., Kanagawa, Japan
fYear :
1995
fDate :
15-17 Feb. 1995
Firstpage :
36
Lastpage :
37
Abstract :
The 1.65 Gb/s 60 mW 4:1 multiplexer and 1.8 Gb/s 80 mW 1:4 demultiplexer ICs in a 1.2 /spl mu/m, 15 GHz bipolar process operate with a -2 V single power supply, and exhibit the lowest power-delay products reported to date. Low dissipation results from ECL circuit techniques enabling three-level series gating with a 2 V supply.
Keywords :
bipolar logic circuits; data communication equipment; demultiplexing equipment; digital communication; emitter-coupled logic; multiplexing equipment; time division multiplexing; 1.2 micron; 1.65 Gbit/s; 1.8 Gbit/s; 15 GHz; 2 V; 3-level series-gating ECL circuits; 60 mW; 80 mW; ECL circuit techniques; bipolar process; demultiplexer IC; low power dissipation; multiplexer IC; power-delay products; single power supply; three-level series gating; Bipolar transistors; Circuit testing; Delay; Logic circuits; Logic gates; Multiplexing; Power dissipation; Power supplies; Stacking; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International
Conference_Location :
San Francisco, CA, USA
ISSN :
0193-6530
Print_ISBN :
0-7803-2495-1
Type :
conf
DOI :
10.1109/ISSCC.1995.535265
Filename :
535265
Link To Document :
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