DocumentCode :
26676
Title :
A Complementary Dual-Contact MEMS Switch Using a “Zipping” Technique
Author :
Yong-Ha Song ; Min-Wu Kim ; Min-Ho Seo ; Jun-Bo Yoon
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Volume :
23
Issue :
3
fYear :
2014
fDate :
Jun-14
Firstpage :
710
Lastpage :
718
Abstract :
This paper presents a microelectromechanical systems contact switch having both hard and soft contact materials in a single cantilever-type switching device. It operates with a zipping mechanism within which both contact materials (Pt-to-Pt and Au-to-Au) make individual contact sequentially and then detach in a reverse sequence to take advantage of both contact materials: low contact resistance and high reliability in a hot switching condition. In addition, an extended gate electrode and double T-shape cantilever beam structures effectively facilitate the sequential actuation. The fabricated switch successfully demonstrated a “dual-contact concept”-it made two sequential contacts at 31 (Pt-to-Pt) and 56 V (Au-to-Au) and it was then detached at 49 (Au-to-Au) and 23 V (Pt-to-Pt) in a single switching operation. Also, it achieved a low contact resistance of 0.3-0.5 Ω (including beam and some portion of the signal line resistances) at gate voltage from 60 to 70 V owing to the Au-to-Au contact in the device. Simultaneously, negligible contact resistance variation was observed during 2 × 106 cycles at a voltage/current level of 10 V/10 mA under hot switching and unpackaged environments, representing >100-fold longer lifetime than that of a conventional Au-to-Au cantilever switch fabricated on the same wafer.
Keywords :
cantilevers; contact resistance; electrodes; gold; microswitches; platinum; reliability; Au; Pt; complementary dual-contact MEMS switch; contact materials; double T-shape cantilever beam structures; extended gate electrode; high reliability; low contact resistance; microelectromechanical systems contact switch; resistance 0.3 ohm to 0.5 ohm; sequential actuation; single cantilever-type switching device; voltage 23 V to 70 V; zipping technique; Contacts; Electrodes; Logic gates; Materials; Structural beams; Switches; Voltage measurement; MEMS relay; Microelectromechanical systems (MEMS) switch; contact material; contact resistance; microswitch; relay; reliability; zipping; zipping.;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2013.2281835
Filename :
6612644
Link To Document :
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