Title :
Analytical model for p-n junctions under point source illumination
Author :
Blanco-Filgueira, B. ; López, P. ; Döge, J.
Author_Institution :
Dept. of Electron. & Comput. Sci., Univ. of Santiago de Compostela, Santiago de Compostela, Spain
Abstract :
An analytical model of the photoresponse of p-n junctions under a point source illumination is presented. The model measures the response of different regions of the pixel in terms of current. Both p-n+ and p-Nwell junction photodiodes were fabricated in a standard UMC 90nm technology and tested. Model and experimental data reveal a similar behaviour.
Keywords :
CMOS image sensors; nanofabrication; p-n junctions; photodiodes; semiconductor device models; CMOS image sensor; complementary metal-oxide semiconductor image sensors; device fabrication; junction photodiodes; p-n junction; photoresponse; pixels; size 90 nm; Image sensors; Modeling; Photodiodes;
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-8155-2
DOI :
10.1109/ICECS.2010.5724659
