• DocumentCode
    2668307
  • Title

    Study of gallium phosphate and langasite crystals and resonators by X-ray topography

  • Author

    Capelle, B. ; Zarka, A. ; Detaint, J. ; Schwartzel, J. ; Ibanez, A. ; Philippot, E. ; Denis, J.P.

  • Author_Institution
    LMCP, Paris VI/VII Univ., France
  • fYear
    1994
  • fDate
    1-3 Jun 1994
  • Firstpage
    48
  • Lastpage
    57
  • Abstract
    The gallium phosphate (GaPO4) is, as berlinite, a close crystallographic analogue of quartz with the advantage that it has no α-β phase transition. It was shown that this material has very attractive properties for the applications to piezoelectric devices, due to its large coupling coefficients and to the existence of compensated cuts. Furthermore, it can be used up to extremely high temperatures (900°C). To obtain much larger crystals, epitaxial growth of GaPO4 on berlinite plates with several orientations was performed. The langasite crystals (LGS: La3Ga5SiO14) were obtained by the Czochralski method. This new material has probably one compensated cut with a large coupling coefficient and very reduced angular sensitivity. Using the synchrotron radiation delivered by the DCI storage ring at the LURE (Orsay, France), we have studied by the X-ray topography technique the crystalline perfection of new GaPO4 samples and different langasite crystals of different sources. For this study we have used traverse and section topography
  • Keywords
    X-ray topography; crystal growth from melt; crystal resonators; epitaxial growth; gallium compounds; lanthanum compounds; piezoelectric materials; surface topography; 900 C; Czochralski method; DCI storage ring; GaPO4; GaPO4 samples; LURE; La3Ga5SiO14; X-ray topography; angular sensitivity; berlinite; coupling coefficient; crystalline perfection; crystallographic analogue; epitaxial growth; langasite crystals; piezoelectric devices; resonators; section topography; synchrotron radiation; traverse topography; Crystalline materials; Crystallization; Crystallography; Crystals; Epitaxial growth; Gallium; Piezoelectric devices; Piezoelectric materials; Surfaces; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium, 1994. 48th., Proceedings of the 1994 IEEE International
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1945-1
  • Type

    conf

  • DOI
    10.1109/FREQ.1994.398355
  • Filename
    398355