Title :
Observation of huge nonlinear absorption enhancement near exciton resonance in GaN
Author :
Kung-Hsuan Lin ; Gia-Wei Chern ; Yin-Chieh Huang ; Chi-Kuang Sun ; Keller, S. ; Mishra, U. ; DenBaars, S.P.
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Huge nonlinear-absorption enhancement was observed in GaN system at the excitonic transition wavelength. This excitonic enhancement is attributed to four-wave-mixing type nonlinear processes. The peak nonlinear coefficient is at least 3000 cm/GW corresponding to an enhancement factor of >200. The dephasing time of the exciton was also observed to be 60-160 fs in GaN thin film at room temperature.
Keywords :
III-V semiconductors; excitons; gallium compounds; multiwave mixing; semiconductor thin films; visible spectra; wide band gap semiconductors; 20 degC; 60 to 160 fs; GaN; exciton resonance; excitonic enhancement; four-wave-mixing; nonlinear absorption; nonlinear processes; room temperature; Absorption; Excitons; Gallium nitride; Gaussian processes; Nonlinear optics; Optical films; Optical pumping; Resonance; Sun; Temperature;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238208
