DocumentCode
2669052
Title
Terahertz electrooptic modulation of a single biased GaAs quantum well
Author
Ciulin, V. ; Carter, S. ; Sherwin, M. ; Huntington, A. ; Coldren, L. ; Maslov, A.V. ; Citrin, D.S.
Author_Institution
Dept. of Phys., California Univ., Santa Barbara, CA, USA
fYear
2003
fDate
6-6 June 2003
Abstract
We investigate the optical interband properties of GaAs quantum wells driven by a terahertz field. The application of this field shifts the exciton absorption energy. Additionally, terahertz optical sidebands are observed up to 140 K.
Keywords
III-V semiconductors; electro-optical modulation; excitons; gallium arsenide; quantum confined Stark effect; semiconductor quantum wells; submillimetre wave generation; GaAs; electrooptic modulation; exciton absorption energy; optical interband properties; quantum confined Stark effect; quantum well; terahertz modulation; terahertz optical sidebands; Electric fields; Electromagnetic wave absorption; Electron optics; Excitons; Frequency; Gallium arsenide; Optical mixing; Optical modulation; Resonance; Stark effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-749-0
Type
conf
DOI
10.1109/QELS.2003.238209
Filename
1276223
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