DocumentCode :
2669140
Title :
Small signal characterization and modeling of LC-tanks fabricated in BiCMOS process
Author :
Andrei, C. ; Bassement, Gregory ; Depreeuw, Didier ; Imbert, Guy
Author_Institution :
NXP Semicond., France
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
1096
Lastpage :
1099
Abstract :
In this paper, a procedure for characterization and modeling of LC-tanks is proposed to enhance simulation accuracy in design of monolithic Voltage Controlled Oscillators (VCO). This efficient procedure is easy to implement combining robust design of G-S-G (Ground-Signal-Ground) test structures and accurate on-wafer characterizations, and it is in particular suitable for modeling of high frequency VCOs fabricated in advanced CMOS and BiCMOS technologies. The methodology allows the extraction of LC-tank capacitors including all RLC-tank parasitics and therefore features an important increase of modeling accuracy. The method has been validated in the case of several LC-tanks (oscillating between 6 and 10GHz). The tank inductors and capacitors have been characterized on-wafer up to 50GHz.
Keywords :
BiCMOS integrated circuits; RLC circuits; capacitors; inductors; integrated circuit testing; voltage-controlled oscillators; BiCMOS process; LC-tank capacitors; LC-tanks; RLC-tank parasitics; VCO; frequency 6 GHz to 10 GHz; ground-signal-ground test structures; monolithic voltage controlled oscillators; small signal characterization; tank inductors; Capacitance; Capacitors; Frequency measurement; Inductance measurement; Q measurement; Radio frequency; Robustness; LC-tank oscillator; RF modelling; S parameter; passive devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-8155-2
Type :
conf
DOI :
10.1109/ICECS.2010.5724707
Filename :
5724707
Link To Document :
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