DocumentCode :
2669352
Title :
A novel scalable spiking pixel architecture for deep submicron CMOS technologies
Author :
Boussaid, Farid ; Shoushun, Chen ; Bermak, Amine
Author_Institution :
Western Australia Univ., Perth, WA
fYear :
2006
fDate :
5-7 Sept. 2006
Firstpage :
131
Lastpage :
135
Abstract :
In this paper, the authors propose a scalable spiking pixel architecture for deep submicron CMOS technologies. The proposed pixel architecture uniquely combines counting and memory functions into a single compact circuit, providing for in-pixel storage capability; in-pixel analog-to-digital conversion and random read-out of digital pixel values. Pixel fill-factor is better than 15% for a 50times50mum pixel fabricated using AMI 0.35mum CMOS technology. Reported experimental results validate the proposed spiking pixel architecture for the next generation of deep submicron silicon processes
Keywords :
CMOS image sensors; analogue-digital conversion; 0.35 micron; 50 micron; CMOS technology; analog-to-digital conversion; in-pixel storage; pixel fill-factor; random read-out; spiking pixel architecture; CMOS technology; Counting circuits; Delay; Inverters; Lighting; Photodiodes; Random access memory; Strontium; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on
Conference_Location :
Tunis
Print_ISBN :
0-7803-9726-6
Type :
conf
DOI :
10.1109/DTIS.2006.1708718
Filename :
1708718
Link To Document :
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