Title :
Excitation of coherent phonons and plasmons in InSb by impulsive Raman scattering
Author :
Hasselbeck, M.P. ; Stalnaker, D. ; Schlie, L.A.
Author_Institution :
Dept. of Phys. & Astron., New Mexico Univ., Albuquerque, NM, USA
Abstract :
The relative contributions of coherent phonons and plasmons in the THz emission spectra of InSb change with azimuthal orientation. This suggests interference of two Raman excitation processes.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; phonon-plasmon interactions; photoexcitation; stimulated Raman scattering; submillimetre wave generation; InSb; Raman excitation processes; THz emission spectra; coherent phonons; impulsive Raman scattering; plasmons; Azimuthal angle; Frequency estimation; Interference; Laser excitation; Light scattering; Optical polarization; Phonons; Plasmons; Raman scattering; Surface emitting lasers;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238319
