Title :
Band offsets measurement of Si-SiO/sub 2/ interfaces by internal photoemission induced second-harmonic generation
Author :
Marka, Z. ; Pasternak, R. ; Jiang, Y. ; Rashkeev, S.N. ; Pantelides, S.T. ; Tolk, N.H. ; Roy, P.K. ; Kozub, J.
Author_Institution :
Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN, USA
Abstract :
We measured the Si valence to SiO/sub 2/ conduction band offset via multiphoton internal-photoemission induced second-harmonic generation for the first time, providing a noninvasive sensitive tool for band offsets measurement in wide variety of semiconductor interfaces.
Keywords :
conduction bands; elemental semiconductors; interface states; multiphoton spectra; optical harmonic generation; photoemission; silicon; silicon compounds; valence bands; Si valence; Si-SiO/sub 2/; Si-SiO/sub 2/ interfaces; SiO/sub 2/ conduction band offset; band offsets measurement; internal photoemission; multiphoton internal-photoemission; second-harmonic generation; semiconductor interfaces; Electric variables measurement; Electron traps; Equations; Extraterrestrial measurements; Free electron lasers; Laser beams; Laser excitation; Optical surface waves; Photoelectricity; Semiconductor lasers;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238323
