DocumentCode :
2669489
Title :
Measurement of Vth variation due to STI stress and inverse narrow channel effect at ultra-low voltage in a variability-suppressed process
Author :
Ogasahara, Yasuhiro ; Hioki, Masakazu ; Nakagawa, Tadashi ; Sekigawa, Toshihiro ; Tsutsumi, Toshiyuki ; Koike, Hanpei
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol.(AIST), Tsukuba, Japan
fYear :
2015
fDate :
23-26 March 2015
Firstpage :
126
Lastpage :
130
Abstract :
This paper demonstrates notable impact of Vth shift due to STI-induced dopant redistribution on ultra-low voltage designs. 2.5X Ion change at ultra-low voltages due to STI was measured on a 65nm SOTB CMOS process. Serious 6X Ion change due to inverse narrow channel effects was also observed. We propose ring oscillator based measurement procedure observing Vth shift by exploiting flexible Vth controllability by backgate biasing of SOTB process.
Keywords :
CMOS integrated circuits; integrated circuit measurement; low-power electronics; oscillators; SOTB CMOS process; STI stress; STI-induced dopant redistribution; Vth variation measurement; backgate biasing; inverse narrow channel effect; ring oscillator; size 65 nm; ultra-low voltage; variability-suppressed process; CMOS integrated circuits; Irrigation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location :
Tempe, AZ
ISSN :
1071-9032
Print_ISBN :
978-1-4799-8302-5
Type :
conf
DOI :
10.1109/ICMTS.2015.7106122
Filename :
7106122
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2669489
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