• DocumentCode
    2669489
  • Title

    Measurement of Vth variation due to STI stress and inverse narrow channel effect at ultra-low voltage in a variability-suppressed process

  • Author

    Ogasahara, Yasuhiro ; Hioki, Masakazu ; Nakagawa, Tadashi ; Sekigawa, Toshihiro ; Tsutsumi, Toshiyuki ; Koike, Hanpei

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol.(AIST), Tsukuba, Japan
  • fYear
    2015
  • fDate
    23-26 March 2015
  • Firstpage
    126
  • Lastpage
    130
  • Abstract
    This paper demonstrates notable impact of Vth shift due to STI-induced dopant redistribution on ultra-low voltage designs. 2.5X Ion change at ultra-low voltages due to STI was measured on a 65nm SOTB CMOS process. Serious 6X Ion change due to inverse narrow channel effects was also observed. We propose ring oscillator based measurement procedure observing Vth shift by exploiting flexible Vth controllability by backgate biasing of SOTB process.
  • Keywords
    CMOS integrated circuits; integrated circuit measurement; low-power electronics; oscillators; SOTB CMOS process; STI stress; STI-induced dopant redistribution; Vth variation measurement; backgate biasing; inverse narrow channel effect; ring oscillator; size 65 nm; ultra-low voltage; variability-suppressed process; CMOS integrated circuits; Irrigation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2015 International Conference on
  • Conference_Location
    Tempe, AZ
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4799-8302-5
  • Type

    conf

  • DOI
    10.1109/ICMTS.2015.7106122
  • Filename
    7106122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2669489