Title :
CNTFET basics and simulation
Author :
Dang, T. ; Anghel, L. ; Leveugle, R.
Author_Institution :
TIMA Lab., Grenoble
Abstract :
This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. The conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact resistance influences only the current level. From a designer´s point of view, taking care of the parameter variations and in particular of the nanotube diameters is crucial to achieve reliable circuits
Keywords :
carbon nanotubes; field effect transistors; nanotube devices; semiconductor device models; CNTFET; carbon nanotube field effect transistor; contact resistance; current level; nanotube diameters; parameter variation; threshold voltage; Analytical models; CMOS logic circuits; CMOS technology; Circuit faults; Circuit simulation; Logic circuits; Logic devices; Semiconductor device modeling; Silicon;
Conference_Titel :
Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on
Conference_Location :
Tunis
Print_ISBN :
0-7803-9726-6
DOI :
10.1109/DTIS.2006.1708731
