Title :
Design-oriented compact models for CNTFETs
Author :
Prégaldiny, Fabien ; Lallement, Christophe ; Kammerer, Jean-baptiste
Author_Institution :
InESS/ENSPS, Illkirch
Abstract :
This paper deals with the compact modeling of an emerging technology: the carbon nanotube field-effect transistor (CNTFET). The paper proposed two design-oriented compact models, the first one for CNTFET with a classical behavior (MOSFET-like CNTFET), and the second one for CNTFET with an ambipolar behavior (Schottky-barrier CNTFET). Both models have been compared with exact numerical simulations and then implemented in VHDL-AMS
Keywords :
Schottky gate field effect transistors; carbon nanotubes; field effect transistors; nanotube devices; semiconductor device models; Schottky-barrier CNTFET; VHDL-AMS; ambipolar behavior; carbon nanotube field-effect transistor; compact models; exact numerical simulations; Carbon nanotubes; FinFETs; Hardware design languages; Integrated circuit technology; MOSFET circuits; Quantum mechanics; Silicon; Tunneling; Very large scale integration;
Conference_Titel :
Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on
Conference_Location :
Tunis
Print_ISBN :
0-7803-9726-6
DOI :
10.1109/DTIS.2006.1708732
