Title :
Sub-millimeter wave active imaging with silicon integrated circuits
Author_Institution :
High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal, Germany
Abstract :
This paper reviews recent advances in sub-millimeter wave circuit design based on silicon (SiGe and CMOS) process technologies for active imaging applications. Computed Tomography (CT) imaging results at 650 GHz, heterodyne transmission and reflection mode imaging at 820 GHz, and magnitude and phase imaging at 160 GHz in silicon process technologies are presented.
Keywords :
Ge-Si alloys; computerised tomography; integrated circuit design; submillimetre wave imaging; submillimetre wave integrated circuits; CT imaging; active imaging applications; computed tomography imaging; frequency 160 GHz; frequency 650 GHz; frequency 820 GHz; magnitude imaging; phase imaging; reflection mode imaging; silicon integrated circuits; silicon process technologies; submillimeter wave active imaging; submillimeter wave circuit design; CMOS integrated circuits; Computed tomography; Detectors; Receivers; Silicon; Silicon germanium;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6104753
