Title :
A 0.9 V embedded ferroelectric memory for microcontrollers
Author :
Sumi, T. ; Azuma, M. ; Otsuki, T. ; Gregory, J. ; Paz de Araujo, C.A.
Author_Institution :
Matsushita Electron. Corp., Osaka, Japan
Abstract :
This work demonstrates application of ferroelectric technology in the embedded "system-on-chip" area. The focus of this paper is twofold: (1) Optimization of the material properties and cell design to achieve 0.9 V operation with fully-saturated hysteresis loops, and high speed (<100ns); and, (2) Demonstration of the overall "system-on-chip" device architecture and operation using the ferroelectric memory in an embedded environment.
Keywords :
dielectric hysteresis; ferroelectric storage; microcontrollers; 0.9 V; 100 ns; embedded ferroelectric memory; high speed operation; hysteresis loop; microcontrollers; optimization; system-on-chip device architecture; Capacitors; Dielectrics; Ferroelectric materials; Microcontrollers; Nonvolatile memory; Pulse measurements; Random access memory; Read-write memory; Semiconductor device modeling; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2495-1
DOI :
10.1109/ISSCC.1995.535280
