Title :
Threshold voltage instability in organic TFT with SiO2 and SiO2/parylene-stack dielectrics
Author :
Wrachien, Nicola ; Cester, Andrea ; Pinato, Alessandro ; Meneghini, Matteo ; Tazzoli, Augusto ; Meneghesso, Gaudenzio ; Kovac, Jaroslav ; Jakabovic, Jan ; Donoval, Daniel
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padova, Italy
Abstract :
We study the charge trapping/detrapping kinetics on pentacene-based organic thin-film-transistors featuring SiO2 and SiO2/parylene C stack gate insulators. The threshold voltage variation is correlated with the gate pulse width and amplitude, and it is due to charge trapping, rather than permanent degradation. The detrapping kinetics is thermally-activated and it is accelerated if the device is illuminated. The additional parylene layer brings benefits by strongly reducing the charge trapping/detrapping, and increasing the hole mobility and the drain current.
Keywords :
dielectric materials; silicon compounds; thin film transistors; SiO2; charge trapping-detrapping kinetics; drain current; hole mobility; parylene C stack gate insulators; parylene-stack dielectrics; pentacene-based organic thin-film-transistors; threshold voltage instability; Costs; Dielectric substrates; Fabrication; Kinetic theory; Organic semiconductors; Organic thin film transistors; Pentacene; Silicon; Thin film transistors; Threshold voltage; component; hysteresis; organic TFT; parylene; pentacene; traps;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173234
