Near-field spectroscopy of InAs single quantum dots at 70 K

Author

Young-Jun Yu ; Wonho Jhe ; Arakawa, Y.

Author_Institution

Center for Near-Field Atom-Photon Technol., Seoul Nat. Univ., South Korea

fYear

2003

fDate

6-6 June 2003

Abstract

We demonstrate high-resolution near-field optical microscopy of self-assembled single semiconducting InAs/GaAs QDs at liquid nitrogen temperature of 70 K. We have reduced the number of excited QDs as well as the background photoluminescence (PL) from the barrier layer by simultaneously employing both shadow mask apertures produced by 100 run dielectric microspheres and a 30 (or 100) run apertured fiber probe that allow enhanced spatial and optical resolution at 70 K.

Keywords

III-V semiconductors; gallium arsenide; image resolution; indium compounds; near-field scanning optical microscopy; photoluminescence; self-assembly; semiconductor quantum dots; 70 K; InAs-GaAs; apertured fiber probe; dielectric microspheres; liquid nitrogen temperature; near-field spectroscopy; optical resolution; photoluminescence; self-assembled semiconductor QD; shadow mask apertures; single quantum dots; spatial resolution; Apertures; Dielectric liquids; Electrochemical impedance spectroscopy; Gallium arsenide; Nitrogen; Optical microscopy; Photoluminescence; Quantum dots; Semiconductivity; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-749-0

Type

conf

DOI

10.1109/QELS.2003.238519

Filename

1276279